Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• . Another major difference is that in the experiment, a line is being etched with a PE beam having a finite spot size. The effect of pixel dwell time, pixel overlap and multiple passes has not been taken into account, all of which could play an important role in circumstances involving surface diffusion

• current, a pitch between exposure points of 5 nm, and a dwell time of 1 μs; the pattern was repeated for 3000 passes. The etching parameters were 20 keV, 3.2 nA, a pitch of 1 nm, a dwell time of 10 μs, and 35000 passes. It should be noted that for the etching process the electron beam current and

• substrate with a 20 nm gold–palladium layer and a 5 nm titanium adhesion layer. The line was patterned in 500 passes with a dwell time of 500 µs, using a 5 keV beam and 100 pA current with a defocus of 100 nm. Prior to the FIB milling the line was covered with a protective layer of FEBID Pt/C from the

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• by a return to 0% strain, with each increment being 50% and a dwell time of 10 s. The relative resistance exhibited a gradual increase as the strain was increased from 0 to 200%; it subsequently reverted to its initial level upon release of the strain from 200 to 0%. The helical sensor demonstrated

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (<8 nC/μm2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose. Keywords

• : direct writing; dwell time; electron dose; etching; graphene; maskless lithography; nanopatterning; Introduction The discovery of extraordinary and controllable electrical conductivity in graphene back in 2004 made it the most recognized 2D material [1]. The newly discovered phenomena, such as

• is dependent on the precursor dynamics (adsorption/desorption rate, diffusion), electron beam (lateral size, electron flux, energy), and scanning parameters (dwell time, refresh time, scanning strategy) [22]. Additionally, residual hydrocarbons inside the scanning electron microscope chamber manifest

Current-induced mechanical torque in chiral molecular rotors

• Richard Korytár and
• Ferdinand Evers

Beilstein J. Nanotechnol. 2023, 14, 711–721, doi:10.3762/bjnano.14.57

• particle The substitution of leaves the second EOM in the form where we introduced and the dot indicates differentiation with respect to . At the entry point, s = 0, the velocity of the particle equals dz(0)/dt. The expression describes the inverse dwell time δτ. We shall assume that δτ = 10−2T and

Measurement of polarization effects in dual-phase ceria-based oxygen permeation membranes using Kelvin probe force microscopy

• Kerstin Neuhaus,
• Christina Schmidt,
• Liudmila Fischer,
• Wilhelm Albert Meulenberg,
• Ke Ran,
• Joachim Mayer and
• Stefan Baumann

Beilstein J. Nanotechnol. 2021, 12, 1380–1391, doi:10.3762/bjnano.12.102

• ethanol for 48 h on a roller bench with 175 rpm. After drying in ambient air at 70 °C the powder mixture was pressed with an uniaxial press in disc-shaped membranes with d = 20 mm. The discs were sintered with a heating rate of 5 K/min to 1200 °C and a dwell time of 5 h. At the sintering temperature, the

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• role of these processes under specific conditions might be a topic for a separate investigation, which goes beyond the scope of the present study. Irradiation In experiments the irradiation phase of the FEBID process can last for a period (called dwell time τd) from sub-microseconds to sub-milliseconds

• coalescence into metal-enriched clusters and bigger structures. As the typical dwell time values are relatively short, adsorption and desorption of precursor molecules within the irradiation phase are assumed negligible. In this step, the electron-induced precursor fragmentation is simulated by means of IDMD

• rate to the electron flux. As the realistic experimental time scale for τd is challenging for all-atom MD, the simulated PE fluxes J0 (and hence PE beam currents I0) are rescaled to match the number of PE per unit area and per dwell time as in experiments. The correspondence of simulated results to

Surface-enhanced Raman scattering of water in aqueous dispersions of silver nanoparticles

• Paulina Filipczak,
• Krzysztof Hałagan,
• Jacek Ulański and
• Marcin Kozanecki

Beilstein J. Nanotechnol. 2021, 12, 497–506, doi:10.3762/bjnano.12.40

• hydration layer, but it is also transferred to deeper layers of water up to approx.10 Å (this value is only slightly impacted by the interaction energies). As a result, water molecules around AgNPs have a lower kinetic energy and a longer dwell time that favours structure stabilization. A similar effect has

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• appropriate dose range was determined in prior automated dose tests (cf. Supporting Information File 1, section “Automation in FIB-o-mat”). The used ion beam current was 2.6 pA at an acceleration voltage of 30 kV and an extractor voltage of 32 kV. The dwell time was 1 μs and the pitch was 5 nm. The magnetic

• acceleration voltage of 30 kV and a BIV of around 32.3 kV. The patterns were constructed from circle segments combined with linear segments to define length and width of the trampoline bridges. In the absence of contaminants, a pitch of 50 pm in combination with a dwell time of 4 ms leads to well-defined

• . For Ga ion beam milling a current of 10 pA, a pitch of 3 nm and a dwell time of 1 μs were employed in a two-step patterning process. First, the surrounding gold was removed by rectangular scanning of a square of several micrometers from which a slightly larger tetramer shape was subtracted

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

• Cristiano Glessi,
• Aya Mahgoub,
• Cornelis W. Hagen and
• Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

• for deposition upon e-beam irradiation. When deposition was successful, two types of deposits were created. Firstly, large deposits for composition analysis were written by repeatedly (2000 passes) exposing a 250 × 250 nm2 area, using point exposures with a dwell time of 500 µs and a pitch of 10 nm

• between the exposure points. Secondly, to characterize the growth, square arrays of 3 × 3 pillars, each pillar grown at a different dwell time, were fabricated. In each array, the pillar separation was 1 µm. Two types of arrays were deposited, one with short dwell times of 0.1, 0.2, 0.5, 1, 2, 5, 10, 20

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• within a set of images. The grid of the Everhart–Thornley detector was kept at 500 V while photomultiplier gain, brightness, and image intensity were adjusted for each set of images to keep the signal on all images within the dynamic range of the detector. Images were acquired at a dwell time of 0.5 µs

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• perspective, charge compensation can be challenging as the total amount of charges required for compensation depends linearly on the number of charges implanted per line scanned. In other words, the settings of the flood gun have to be adjusted whenever the number of pixels per line, dwell time, or beam

• current are changed. Figure 3 illustrates how the variation of the dwell time of the ion beam on a pixel influences the brightness of the image if the flooding parameters are kept constant. Similar results can be obtained when the flood time is varied at a constant dwell time. Secondary ion mass

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

• Eduardo Serralta,
• Nico Klingner,
• Olivier De Castro,
• Michael Mousley,
• Santhana Eswara,
• Serge Duarte Pinto,
• Tom Wirtz and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

• 5 × 10−7 mbar. These conditions provide an estimated beam current of 50 fA. For the STIM images, a single scan with pixel dwell time of 110 μs was used. In the SE imaging mode, we used the line average mode with ten scans and a pixel dwell time of 10 μs. The research data used in this publication is

• based on their gray levels. For this image we used 30 kV acceleration voltage, with a 5 μm aperture, in spot control 5, a gun gas pressure of 1.3 × 10−6 mbar, and 300 μs pixel dwell time. The sample comprises a 20 nm thick silicon nitride membrane used as a support layer. A 20 nm thick layer of silicon

• . The pixel dwell time used in the STIM data acquisition was 200 μs. Thallium chloride evaporated on a TEM grid. (a) Secondary electron image. Inset of (a) shows the regions of the detector used to generate the following STIM images. (b) BF STIM image with acceptance angle of 0 to 4°. (c) DF STIM using

Electron beam-induced deposition of platinum from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Aya Mahgoub,
• Hang Lu,
• Rachel M. Thorman,
• Konstantin Preradovic,
• Titel Jurca,
• Lisa McElwee-White,
• Howard Fairbrother and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2020, 11, 1789–1800, doi:10.3762/bjnano.11.161

• ultrahigh-resolution (immersion) mode. Specific patterning parameters such as electron beam dwell time and the refresh time between exposure passes will be detailed for each experiment. To characterize FEBID growth, the height and base diameter of pillars were measured using 35° tilt images. Energy

• was used with beam currents of 12, 38, and 140 pA. A writing strategy was employed wherein a 4 × 5 array of locations at a 200 nm pitch was exposed in a serial fashion. At each location, the electron beam remained for a different dwell time, starting with 0.5 ms and increasing by 1 ms at each further

• electrons used to grow a pillar, that is, the beam current multiplied by the total dwell time at the location of exposure, excluding the waiting time. For point exposures, this is a better-defined measure than the dose per unit area. Although the diameters of the pillars from Pt(CO)2Cl2, as judged from

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• mode with multiple passes and a beam dwell time of 2 µs. Arrays of 10 × 10 µm2 squares irradiated with different doses were used for measuring the dependence of the surface height on the irradiation dose, as previously described [4]. The distance between the square edges was kept at either 10 or 15 µm

Helium ion microscope – secondary ion mass spectrometry for geological materials

• Matthew R. Ball,
• Richard J. M. Taylor,
• Joshua F. Einsle,
• Fouzia Khanom,
• Christelle Guillermier and
• Richard J. Harrison

Beilstein J. Nanotechnol. 2020, 11, 1504–1515, doi:10.3762/bjnano.11.133

• value of m/z for which no secondary ions were expected, for the measurement of a “background count rate”, with a fixed, low magnetic field of around 100 mT. The primary beam was rastered over the sample to simultaneously map ion counts on each detector with a typical dwell time per pixel of 4 ms

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• ]. The average recorded beam current throughout the irradiations was 37.5 ± 0.4 pA, and the probe size was determined at approx. 7 nm [9]. The areal ion dose delivered to each sample was maintained at approx. 1017 ions cm−2, with a step size of 1 nm and a dwell time of 4.3 μs throughout the duration of a

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• from the substrate to the top of the pillar [36][37]. This shows the need for future systematic experiments varying the dwell time in pulsed growth or varying the flux of precursor gas. (High-resolution) scanning transmission electron microscopy Dependence of NW inner diameter on the ion beam current

Evaluation of click chemistry microarrays for immunosensing of alpha-fetoprotein (AFP)

• Seyed Mohammad Mahdi Dadfar,
• Sylwia Sekula-Neuner,
• Vanessa Trouillet,
• Hui-Yu Liu,
• Ravi Kumar,
• Annie K. Powell and
• Michael Hirtz

Beilstein J. Nanotechnol. 2019, 10, 2505–2515, doi:10.3762/bjnano.10.241

• Nanosciences) [45][46]. Prior to use, the cantilevers were activated by oxygen plasma (10 sccm O2, 0.2 mbar, 100 W, 2 min) and used immediately. The pen reservoir was filled with 0.2 μL of ink solution. For all patterns, a probe dwell time of 0.1 s was applied. Spotting was performed at an optimized relative

Gold-coated plant virus as computed tomography imaging contrast agent

• Alaa A. A. Aljabali,
• Mazhar S. Al Zoubi,
• Khalid M. Al-Batanyeh,
• Ali Al-Radaideh,
• Mohammad A. Obeid,
• Abeer Al Sharabi,
• Walhan Alshaer,
• Bayan AbuFares,
• Tasnim Al-Zanati,
• Murtaza M. Tambuwala,
• Naveed Akbar and
• David J. Evans

Beilstein J. Nanotechnol. 2019, 10, 1983–1993, doi:10.3762/bjnano.10.195

• data was processed by Aztec software from Oxford Instruments. Images were recorded on CCD camera with mapping resolution of 2048 × 1600. The beam was selected with accelerating voltage for imaging, beam current 100 pA at 30 kV and a spot size of 5–6, fast scan rate of dwell time (0.1–0.3 μs), detector

Precise local control of liquid crystal pretilt on polymer layers by focused ion beam nanopatterning

• Maxim V. Gorkunov,
• Irina V. Kasyanova,
• Vladimir V. Artemov,
• Alena V. Mamonova and
• Serguei P. Palto

Beilstein J. Nanotechnol. 2019, 10, 1691–1697, doi:10.3762/bjnano.10.164

• within a raster consisting of up to 4096 × 3536 pixel2 as well as the time spent by the beam on each pixel (the so-called dwell time). According to our previous comparative study [31], a relatively small dose of Ga+ ions is sufficient for the required polymer transformation and we adopt here the same

• dwell time value of 150 μs. To achieve intermediate LC pretilt, we imprint three periodic patterns of stripes parallel to the PI rubbing direction. The patterns cover square areas of 440–450 μm in size and consist of 440, 294 and 220 stripes imprinted with 1 μm, 1.5 μm and 2 μm periodicity, respectively

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

• Ivan Kundrata,
• Karol Fröhlich,
• Lubomír Vančo,
• Matej Mičušík and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 1443–1451, doi:10.3762/bjnano.10.142

• . Point Auger spectra were collected from different areas on the surface of the sample after 20 s cleaning with 500 eV Ar+ ions. Dwell time during the acquisitions was 100 ms with 1 eV measurement steps with an energy resolution of ΔE/E of 0.5 %. XPS signals were recorded using a Thermo Scientific K-Alpha

Fabrication of phase masks from amorphous carbon thin films for electron-beam shaping

• Lukas Grünewald,
• Dagmar Gerthsen and
• Simon Hettler

Beilstein J. Nanotechnol. 2019, 10, 1290–1302, doi:10.3762/bjnano.10.128

• × 2048 pixels and a dwell time of 50 ns was used which results in a dose of around 0.2 ions/nm2. Phase-mask patterning In the case of BBs the required thickness profile (Equation 3) was milled with custom FIB routines. These are realized in the form of text files in which the spatial coordinates for the

• . Further optimization of the pattern included an increase of the dwell time for the central point by a factor of five to achieve a similar depth as in the rings. Additionally, an offset angle between each repetition was implemented because the beam is not blanked when it moves radially outward between the

• software of the FIB system, which generates the milling pattern by calculating the dwell times based on the pixel values in the bitmap. The maximum dwell time value corresponding to a pixel value of 255 can be specified in the software and the gray values between 0 and 255 are scaled linearly. We used a

Advanced scanning probe lithography using anatase-to-rutile transition to create localized TiO₂ nanorods

• Julian Kalb,
• Vanessa Knittel and
• Lukas Schmidt-Mende

Beilstein J. Nanotechnol. 2019, 10, 412–418, doi:10.3762/bjnano.10.40

• deposited via resistive evaporation with a deposition rate of 3 Å/s. The Zeiss CrossBeam 1540XB FE SEM was employed for electron-beam exposure using an acceleration voltage of 10 kV, a current of 25 pA, a dose of 200 μAs/cm2, an area step size and dwell time of 1.6 nm and 200 ns, respectively, and an

• . Titanium was turned into the TiO2 seed layer in a rapid thermal processing oven at 850 °C in an oxygen atmosphere (500 sccm) for 2 h using a temperature dwell time of ±1 °C/s. The remaining resist was dissolved in acetone. Results and Discussion We have shown in a previous study that the nanorods produced

Accurate control of the covalent functionalization of single-walled carbon nanotubes for the electro-enzymatically controlled oxidation of biomolecules

• Naoual Allali,
• Veronika Urbanova,
• Mathieu Etienne,
• Xavier Devaux,
• Martine Mallet,
• Brigitte Vigolo,
• Jean-Joseph Adjizian,
• Chris P. Ewels,
• Sven Oberg,
• Alexander V. Soldatov,
• Edward McRae,
• Yves Fort,
• Manuel Dossot and
• Victor Mamane

Beilstein J. Nanotechnol. 2018, 9, 2750–2762, doi:10.3762/bjnano.9.257

• and 11 mrad for an image resolution of 1024 × 1024 pixels with a dwell-time of 60 µs. STEM-EDS and STEM-EELS experiments were performed with an electron probe of about 0.17 nm and a convergence semi-angle of 24 mrad. The energy resolution was about 0.45 eV. The collection angle of the EELS

Pattern generation for direct-write three-dimensional nanoscale structures via focused electron beam induced deposition

• Lukas Keller and
• Michael Huth

Beilstein J. Nanotechnol. 2018, 9, 2581–2598, doi:10.3762/bjnano.9.240

• introduces new vertices, but it also allows for changing, e.g., the distance between two neighboring DE locations (also denoted as pitch Π3D = (Πx, Πy, Πz)) or the duration of a dwell event td, as the pattern file generation progresses from one sub-edge to the next. Within one sub-edge, pitch and dwell time

• a very large jump at some time could then compensate too short jumps between two following DEs later on. In the current work a Gaussian is used with the distance of two consecutive DEs as argument. Its width can be defined in the settings file setf. In general, also the choice of the dwell time td

• auxiliary objects are defined in the geometry files. These will appear as first entries in the pattern files and will thus precede the beginning of the 3D deposition properly. The auxiliary objects comprise (a) four single dots written with a short dwell time at fixed positions defining the edges of a